DDR3 SDRAM

The H5TQ4G83CFR-xxC,H5TQ4G63CFR-xxC, H5TQ4G83CFR-xxI, H5TQ4G63CFR-xxI, H5TQ4G83CFR-xxL, H5TQ4G63CFR-xxL,H5TQ4G83CFR-xxJ and 5TQ4G63CFR-xxJ are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density an • VDD=VDDQ=1.5V +/- 0.075V• Fully differential clock inputs (CK, CK) operation• Differential Data Strobe (DQS, DQS)• On chip DLL align DQ, DQS and DQS transition with CK transition• DM masks write data-in at the both rising and falling edges of the data strobe• All addresses and control inputs excep;

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4Gb DDR3 SDRAM

文件：486.31 Kbytes 页数：34 Pages

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4Gb DDR3 SDRAM

文件：486.31 Kbytes 页数：34 Pages

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4Gb DDR3 SDRAM

文件：458.2 Kbytes 页数：35 Pages

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4Gb DDR3 SDRAM

文件：458.2 Kbytes 页数：35 Pages

Hynix

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4Gb DDR3 SDRAM

文件：458.2 Kbytes 页数：35 Pages

Hynix

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