2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

FEATURES • VDD=VDDQ=1.5V +/- 0.075V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All addresses

文件：535.64 Kbytes 页数：34 Pages

Hynix

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2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

FEATURES • VDD=VDDQ=1.5V +/- 0.075V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All addresses

文件：535.64 Kbytes 页数：34 Pages

Hynix

海力士

2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

FEATURES • VDD=VDDQ=1.5V +/- 0.075V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All addresses

文件：535.64 Kbytes 页数：34 Pages

Hynix

海力士

2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

FEATURES • VDD=VDDQ=1.5V +/- 0.075V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All addresses

文件：535.64 Kbytes 页数：34 Pages

Hynix

海力士

2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

FEATURES • VDD=VDDQ=1.5V +/- 0.075V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All addresses

文件：535.64 Kbytes 页数：34 Pages

Hynix

海力士

2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

FEATURES • VDD=VDDQ=1.5V +/- 0.075V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All addresses

文件：535.64 Kbytes 页数：34 Pages

Hynix

海力士

2Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

FEATURES • VDD=VDDQ=1.5V +/- 0.075V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All addresses

文件：535.64 Kbytes 页数：34 Pages

Hynix

海力士

DDR3 SDRAM

The H5TQ2G83GFR-xxC, H5TQ2G63GFR-xxC,H5TQ2G83GFR-xxI, H5TQ2G63GFR-xxI, H5TQ2G83GFRxxL, H5TQ2G63GFR-xxL,H5TQ2G83GFR-xxJ,H5TQ2G63GFR-xxJ are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and hi • VDD=VDDQ=1.5V +/- 0.075V• Fully differential clock inputs (CK, CK) operation• Differential Data Strobe (DQS, DQS)• On chip DLL align DQ, DQS and DQS transition with CK transition• DM masks write data-in at the both rising and falling edges of the data strobe• All addresses and control inputs excep;

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