8Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

Description The H5AN8G4NAFR-xxC, H5AN8G8NAFR-xxC and H5AN8G6NAFR-xxC are a 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 8Gb DDR4 SDRAMs offer fully synchronous operations re

文件：821.06 Kbytes 页数：45 Pages

Hynix

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8Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

Description The H5AN8G4NAFR-xxC, H5AN8G8NAFR-xxC and H5AN8G6NAFR-xxC are a 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 8Gb DDR4 SDRAMs offer fully synchronous operations re

文件：821.06 Kbytes 页数：45 Pages

Hynix

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8Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

Description The H5AN8G4NAFR-xxC, H5AN8G8NAFR-xxC and H5AN8G6NAFR-xxC are a 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 8Gb DDR4 SDRAMs offer fully synchronous operations re

文件：821.06 Kbytes 页数：45 Pages

Hynix

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8Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

Description The H5AN8G4NAFR-xxC, H5AN8G8NAFR-xxC and H5AN8G6NAFR-xxC are a 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 8Gb DDR4 SDRAMs offer fully synchronous operations re

文件：821.06 Kbytes 页数：45 Pages

Hynix

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8Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

Description The H5AN8G4NAFR-xxC, H5AN8G8NAFR-xxC and H5AN8G6NAFR-xxC are a 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 8Gb DDR4 SDRAMs offer fully synchronous operations re

文件：821.06 Kbytes 页数：45 Pages

Hynix

海力士

8Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)

Description The H5AN8G4NAFR-xxC, H5AN8G8NAFR-xxC and H5AN8G6NAFR-xxC are a 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 8Gb DDR4 SDRAMs offer fully synchronous operations re

文件：821.06 Kbytes 页数：45 Pages

Hynix

海力士

Lead-Free&Halogen-Free

FEATURES • VDD=VDDQ=1.2V +/- 0.06V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling  edges of the data strobe • All addresses

文件：844.99 Kbytes 页数：47 Pages

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Lead-Free&Halogen-Free

FEATURES • VDD=VDDQ=1.2V +/- 0.06V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All addresses a

文件：716.05 Kbytes 页数：48 Pages

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16Gb DDR4 SDRAM

FEATURES • VDD=VDDQ=1.2V +/- 0.06V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All addresses

文件：655.34 Kbytes 页数：43 Pages

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16Gb DDR4 SDRAM

FEATURES • VDD=VDDQ=1.2V +/- 0.06V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All addresses

文件：655.34 Kbytes 页数：43 Pages

ETCList of Unclassifed Manufacturers

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