UM-1, UM-4, UM-5 Microprocessor Crystal

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CALIBER

UM-1, UM-4, UM-5 Microprocessor Crystal

文件：46.59 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：H5AQ；Package：SOT89；AUTOMOTIVE COMPLIANT WIDE INPUT VOLTAGE RANGE 300mA ULDO REGULATOR

Features  Wide Input Voltage Range: 3V to 45V  Maximum Output Current: 300mA  Low Dropout Voltage: VDROP = 35mV@IOUT = 10mA (Typ.) VDROP = 350mV@ IOUT = 100mA (Typ.)  Low Quiescent Current: 2.1μA (Typ.)  Fixed Output Voltages: 1.8V, 3.0V, 3.3V and 5.0V  High Output Voltage Accuracy:

文件：1.58 Mbytes 页数：15 Pages

DIODES

美台半导体

DDR4 SDRAM

The H5AN4G4NAFR-xxC, H5AN4G8NAFR-xxC and H5AN4G6NAFR-xxC are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both • VDD=VDDQ=1.2V +/- 0.06V\n• Fully differential clock inputs (CK, CK) operation\n• Differential Data Strobe (DQS, DQS)\n• On chip DLL align DQ, DQS and DQS transition with CK transition\n• DM masks write data-in at the both rising and falling edges of the data strobe\n• All addresses and control inp;

SK hynix

海力士

铁氧体磁芯

TDK

东电化

铁氧体磁芯

TDK

东电化

包装：盒 类别：磁性元件 - 变压器，电感器元件 铁氧体磁芯 描述：MN FERRITE

TDK

东电化

包装：散装 类别：磁性元件 - 变压器，电感器元件 铁氧体磁芯 描述：MN FERRITE

TDK

东电化

包装：散装 类别：磁性元件 - 变压器，电感器元件 铁氧体磁芯 描述：MN FERRITE

TDK

东电化