16Gb DDR4 SDRAM

FEATURES • VDD=VDDQ=1.2V +/- 0.06V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All addresses

文件：655.34 Kbytes 页数：43 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

16Gb DDR4 SDRAM

FEATURES • VDD=VDDQ=1.2V +/- 0.06V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All addresses

文件：655.34 Kbytes 页数：43 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

BGA

海力士

上传：深圳市华来深电子有限公司

TSOP

SKHYNIX

上传：深圳庞田科技有限公司

BGA

Hynix

海力士

上传：深圳市宇创芯科技有限公司