丝印：H4015S；Package：TO252；P-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  DC-DC Converters  Power Management Functions  Backlighting Features and

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DIODES

美台半导体

DUAL 4-STAGE STATIC SHIFT REGISTER WITH SERIAL INPUT/PARALLEL OUTPUT

DESCRIPTION The HCC4015B (extended temperature range) and HCF4015B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micropackage. ■ MEDIUM SPEED OPERATION : 12MHz (typ.) CLOCK RATE AT VDD - VSS = 10V ■

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STMICROELECTRONICS

意法半导体

RadHardened high voltage complementary MOS logic series

文件：141.35 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

Rad-hard, high voltage, CMOS logic series

Features • ESCC qualified • 18 V Absolute maximum ratings • 3 V to 15 V operating voltage • Hermetic packages • Rad-hard 100 krad (Si) TID • SEL immune up to 119 MeV.cm²/mg • SEU immune up to 119 MeV.cm²/mg • -55 °C to +125 °C temperature range • ESCC specification available on ESCC websi

文件：336.95 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体