H2N7000

N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Description TheH2N7000isdesignedforhighvoltage,highspeedapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers.

H2N7000

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription Theseproductshavebeendesignedtominimizeon-stateresistanceWhileproviderugged,reliable,andfastswitchingperformance.Theseproductsareparticularlysuitedforlowvoltage,lowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,and

2N7000

MOSFET(N-Channel)

FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability

2N7000

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-92package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications •Loadswitch •Powermanagement

2N7000

N-ChannelEnhancementModeFET

2N7000

SmallSignalMOSFET

2N7000

N-Channel60-V(D-S)MOSFET

2N7000

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

2N7000

N-CHANNELENHANCEMENTMODE

2N7000

SmallSignalMOSFET200mAmps,60VoltsN?묬hannelTO??2200mAMPS60VOLTS