PNP EPITAXIAL PLANAR TRANSISTOR

Description The H2N5401 is designed for general purpose applications requiring high breakdown voltages. Features • Complements to NPN Type H2N5551 • High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))

文件：38.23 Kbytes 页数：4 Pages

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Amplifier Transistors PNP Silicon

文件：99.22 Kbytes 页数：4 Pages

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PNP Silicon Epitaxial Planar Transistors

PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.

文件：80.63 Kbytes 页数：3 Pages

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PNP Silicon Epitaxial Planar Transistors

文件：201.24 Kbytes 页数：3 Pages

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