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H27

500 mW Zener Diode 1.7 to 37.2 Volts

Features •LowLeakage •LowZenerImpedance •HighReliability

MCCMicro Commercial Components

美微科美微科半导体公司

H27-1

500 mW Zener Diode 1.7 to 37.2 Volts

Features •LowLeakage •LowZenerImpedance •HighReliability

MCCMicro Commercial Components

美微科美微科半导体公司

H2717

NPN SILICON TRANSISTOR

APPLICATIONS TVFINALPICTUREIFAMPLIFIERAPPLICATIONS.

HuashanHuashan Electronic Devices Co

华汕电子器件

H27-2

500 mW Zener Diode 1.7 to 37.2 Volts

Features •LowLeakage •LowZenerImpedance •HighReliability

MCCMicro Commercial Components

美微科美微科半导体公司

H27-3

500 mW Zener Diode 1.7 to 37.2 Volts

Features •LowLeakage •LowZenerImpedance •HighReliability

MCCMicro Commercial Components

美微科美微科半导体公司

H27S4G6F2D

4 Gbit (512M x 8 bit) NAND Flash

SummaryDescription H27(U_S)4G8_6F2Dseriesisa512Mx8bitwithspare16Mx8bitcapacity.Thedeviceisofferedin3.0/1.8VccPowerSupply,andwithx8andx16I/OinterfaceItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Thememoryisdividedi

HynixHynix Semiconductor

SK海力士海力士半导体

H27S4G6F2DKA-BM

4 Gbit (512M x 8 bit) NAND Flash

SummaryDescription H27(U_S)4G8_6F2Dseriesisa512Mx8bitwithspare16Mx8bitcapacity.Thedeviceisofferedin3.0/1.8VccPowerSupply,andwithx8andx16I/OinterfaceItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Thememoryisdividedi

HynixHynix Semiconductor

SK海力士海力士半导体

H27S4G8_6F2D

4 Gbit (512M x 8 bit) NAND Flash

SummaryDescription H27(U_S)4G8_6F2Dseriesisa512Mx8bitwithspare16Mx8bitcapacity.Thedeviceisofferedin3.0/1.8VccPowerSupply,andwithx8andx16I/OinterfaceItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Thememoryisdividedi

HynixHynix Semiconductor

SK海力士海力士半导体

H27S4G8F2D

4 Gbit (512M x 8 bit) NAND Flash

SummaryDescription H27(U_S)4G8_6F2Dseriesisa512Mx8bitwithspare16Mx8bitcapacity.Thedeviceisofferedin3.0/1.8VccPowerSupply,andwithx8andx16I/OinterfaceItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Thememoryisdividedi

HynixHynix Semiconductor

SK海力士海力士半导体

H27S4G8F2DKA-BM

4 Gbit (512M x 8 bit) NAND Flash

SummaryDescription H27(U_S)4G8_6F2Dseriesisa512Mx8bitwithspare16Mx8bitcapacity.Thedeviceisofferedin3.0/1.8VccPowerSupply,andwithx8andx16I/OinterfaceItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Thememoryisdividedi

HynixHynix Semiconductor

SK海力士海力士半导体

H27U4G6F2D

4 Gbit (512M x 8 bit) NAND Flash

SummaryDescription H27(U_S)4G8_6F2Dseriesisa512Mx8bitwithspare16Mx8bitcapacity.Thedeviceisofferedin3.0/1.8VccPowerSupply,andwithx8andx16I/OinterfaceItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Thememoryisdividedi

HynixHynix Semiconductor

SK海力士海力士半导体

H27U4G8_6F2D

4 Gbit (512M x 8 bit) NAND Flash

SummaryDescription H27(U_S)4G8_6F2Dseriesisa512Mx8bitwithspare16Mx8bitcapacity.Thedeviceisofferedin3.0/1.8VccPowerSupply,andwithx8andx16I/OinterfaceItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Thememoryisdividedi

HynixHynix Semiconductor

SK海力士海力士半导体

H27U4G8F2D

4 Gbit (512M x 8 bit) NAND Flash

SummaryDescription H27(U_S)4G8_6F2Dseriesisa512Mx8bitwithspare16Mx8bitcapacity.Thedeviceisofferedin3.0/1.8VccPowerSupply,andwithx8andx16I/OinterfaceItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Thememoryisdividedi

HynixHynix Semiconductor

SK海力士海力士半导体

H27U4G8F2DKA-BM

4 Gbit (512M x 8 bit) NAND Flash

SummaryDescription H27(U_S)4G8_6F2Dseriesisa512Mx8bitwithspare16Mx8bitcapacity.Thedeviceisofferedin3.0/1.8VccPowerSupply,andwithx8andx16I/OinterfaceItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Thememoryisdividedi

HynixHynix Semiconductor

SK海力士海力士半导体

H27U4G8F2DTR-BC

4 Gbit (512M x 8 bit) NAND Flash

SummaryDescription H27(U_S)4G8_6F2Dseriesisa512Mx8bitwithspare16Mx8bitcapacity.Thedeviceisofferedin3.0/1.8VccPowerSupply,andwithx8andx16I/OinterfaceItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Thememoryisdividedi

HynixHynix Semiconductor

SK海力士海力士半导体

H27U4G8F2DTR-BI

4 Gbit (512M x 8 bit) NAND Flash

SummaryDescription H27(U_S)4G8_6F2Dseriesisa512Mx8bitwithspare16Mx8bitcapacity.Thedeviceisofferedin3.0/1.8VccPowerSupply,andwithx8andx16I/OinterfaceItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Thememoryisdividedi

HynixHynix Semiconductor

SK海力士海力士半导体

H27U8G8G5DTR-BC

4 Gbit (512M x 8 bit) NAND Flash

SummaryDescription H27(U_S)4G8_6F2Dseriesisa512Mx8bitwithspare16Mx8bitcapacity.Thedeviceisofferedin3.0/1.8VccPowerSupply,andwithx8andx16I/OinterfaceItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Thememoryisdividedi

HynixHynix Semiconductor

SK海力士海力士半导体

H27U8G8G5DTR-BI

4 Gbit (512M x 8 bit) NAND Flash

SummaryDescription H27(U_S)4G8_6F2Dseriesisa512Mx8bitwithspare16Mx8bitcapacity.Thedeviceisofferedin3.0/1.8VccPowerSupply,andwithx8andx16I/OinterfaceItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Thememoryisdividedi

HynixHynix Semiconductor

SK海力士海力士半导体

H27UAG8T2B

16Gb (2048M x 8bit) NAND Flash

DESCRIPTION TheH27UAG8T2Bisasingle3.3V16GbitNANDflashmemory.TheDevicecontains2planesinasingledie.Eachplaneismadeupofthe512blocks.Eachblockconsistsof256programmablepages.Eachpagecontains8,640bytes.Thepagesaresubdividedintoan8,192-bytesmaindatastor

HynixHynix Semiconductor

SK海力士海力士半导体

H27649-B

HDSL2 Transformers

COILCRAFTCoilcraft

线艺

详细参数

  • 型号:

    H27

  • 制造商:

    MCC

  • 制造商全称:

    Micro Commercial Components

  • 功能描述:

    500 mW Zener Diode 1.7 to 37.2 Volts

供应商型号品牌批号封装库存备注价格
ROHM
16+
SOT-23
10000
进口原装现货/价格优势!
询价
ROHM
17+
SOT-23
6200
100%原装正品现货
询价
ROHM
2017+
SOT-23
48520
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
ROHM/罗姆
22+
SOT-23
25000
只有原装原装,支持BOM配单
询价
HYNIX
23+
TSSOP-48
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
SKHYNIX
22+
TSOP48
6220
原装正品,渠道现货
询价
HY
2023+
TSOP
530
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
HYNIX
17+
NA
9998
全新原装现货
询价
Hynix
2020+
128GbitNandFlash
3850
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
23+
N/A
36100
正品授权货源可靠
询价
更多H27供应商 更新时间2024-4-29 15:14:00