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型号	下载订购	功能描述	制造商上传企业	LOGO
H20R120	文件：370.62 Kbytes Page：12 Pages	Reverse Conducting IGBT with monolithic body diode Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high rugg 文件：370.62 Kbytes 页数：12 Pages	Infineon 英飞凌	Infineon
H20R1202	文件：375.89 Kbytes Page：12 Pages	Reverse Conducting IGBT with monolithic body diode Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, te 文件：375.89 Kbytes 页数：12 Pages	Infineon 英飞凌	Infineon
H20R1203	文件：800.28 Kbytes Page：12 Pages	Reverse conducting IGBT with monolithic body diode 1. Powerful monolithic body diode with low forward voltage designed for soft commutation only 2. Low EMI 3. Qualified according to JESD-022 for target applications 4. Pb-free lead plating; RoHS compliant 文件：800.28 Kbytes 页数：12 Pages	Infineon 英飞凌	Infineon
H20R1203	文件：1.96895 Mbytes Page：16 Pages	Resonant Switching Series Features: •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinV 文件：1.96895 Mbytes 页数：16 Pages	Infineon 英飞凌	Infineon
IHW20N120R2	文件：375.89 Kbytes Page：12 Pages	丝印：H20R1202；Package：PG-TO-247-3-21；Reverse Conducting IGBT with monolithic body diode Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, te 文件：375.89 Kbytes 页数：12 Pages	Infineon 英飞凌	Infineon
IHW20N120R3	文件：800.28 Kbytes Page：12 Pages	丝印：H20R1203；Package：PG-TO247-3；Reverse conducting IGBT with monolithic body diode 1. Powerful monolithic body diode with low forward voltage designed for soft commutation only 2. Low EMI 3. Qualified according to JESD-022 for target applications 4. Pb-free lead plating; RoHS compliant 文件：800.28 Kbytes 页数：12 Pages	Infineon 英飞凌	Infineon
IHW20N120R3	文件：1.96895 Mbytes Page：16 Pages	丝印：H20R1203；Package：PG-TO247-3；Resonant Switching Series Features: •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinV 文件：1.96895 Mbytes 页数：16 Pages	Infineon 英飞凌	Infineon

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市向鸿伟业电子有限公司	H20R120	INFINEON/英飞凌	2410+	TO-247	24520	原装正品.假一赔百.正规渠道.原厂追溯.	询价
谛辉(北京/上海/青岛 )电子科技有限公司	H20R120	INFINEON	25+	TO-3P	18000	原厂直接发货进口原装	询价
齐创科技(上海,北京,青岛)有限公司	H20R120	INFINEON英飞凌	23+	TO-3P	5000	原装正品,假一罚十	询价
深圳市威尔健半导体有限公司	H20R120	TOSHIBA/东芝	23+	TO-220F	69820	终端可以免费供样,支持BOM配单!	询价
深圳市亿智腾科技有限公司	H20R120	英飞凌	24+	TO-247	6430	原装现货/欢迎来电咨询	询价
艾睿（深圳）半导体有限公司	H20R120	INFINEON/英飞凌	2447	TO-3P	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市河锋鑫科技有限公司	H20R120	Infineon/英飞凌	22+	TO-247	6000	十年配单,只做原装	询价
贸泽芯城（深圳）电子科技有限公司	H20R120	INFINEON/英飞凌	23+	TO-247	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
易创佳业科技（深圳）有限公司	H20R120	Infineon/英飞凌	23+	TO-247	6000	原装正品，支持实单	询价
深圳市威雅利发展有限公司	H20R120	INFINEON	1932+	TO-247	261	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

更多H20R120供应商更新时间2025-10-3 16:11:00

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