丝印：H1D；Package：SOD-123FL；Surface Mount High Efficient Rectifier H1A THRU H1M

FEATURES ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● Fast switching for high efficiency ● High forward surge capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：1.61642 Mbytes 页数：3 Pages

RFE

RFE international

High Efficient Rectifier Diode

文件：152.88 Kbytes 页数：2 Pages

YANGJIE

扬杰电子

High Efficient Rectifier D iode

文件：237.82 Kbytes 页数：2 Pages

FS

丝印：H1D；Package：X2SON；TMAG5231 Low-Power, Hall Effect Switch

1 Features • Low power consumption: – 10-Hz versions: 1.3 μA at 3 V – 20-Hz versions: 2 μA at 3 V – 216-Hz versions: 16 μA at 3 V • 1.65-V to 5.5-V operating VCC range • Magnetic threshold option (typical BOP): – 1.8 mT with 0.6-mT hysteresis – 2.85 mT with 1.35-mT hysteresis – 3 mT with

文件：1.75512 Mbytes 页数：33 Pages

TI

德州仪器

丝印：H1D；Package：X2SON；TMAG5231 Low-Power, Hall Effect Switch

1 Features • Low power consumption: – 10-Hz versions: 1.3 μA at 3 V – 20-Hz versions: 2 μA at 3 V – 216-Hz versions: 16 μA at 3 V • 1.65-V to 5.5-V operating VCC range • Magnetic threshold option (typical BOP): – 1.8 mT with 0.6-mT hysteresis – 2.85 mT with 1.35-mT hysteresis – 3 mT with

文件：1.62905 Mbytes 页数：33 Pages

TI

德州仪器

丝印：H1D；Package：X2SON；TMAG5231 Low-Power, Hall Effect Switch

1 Features • Low power consumption: – 10-Hz versions: 1.3 μA at 3 V – 20-Hz versions: 2 μA at 3 V – 216-Hz versions: 16 μA at 3 V • 1.65-V to 5.5-V operating VCC range • Magnetic threshold option (typical BOP): – 1.8 mT with 0.6-mT hysteresis – 2.85 mT with 1.35-mT hysteresis – 3 mT with

文件：1.62841 Mbytes 页数：33 Pages

TI

德州仪器

丝印：H1D；Package：SOT-89；Silicon NPN transistor in a SOT-89 Plastic Package.

文件：276.02 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：H1DFS；Package：SMAF；Surface Mount High Efficiency Rectifier H1AFS Through H1MFS

Features Low profile package Ideal for automated placement Glass passivated chip junction High forward surge capability Super fast reverse recovery time Meets MSL level 1, per J-STD-020, LF maximum peak nf 260 °C

文件：2.72205 Mbytes 页数：3 Pages

RFE

RFE international

MultiTech SocketModem Embedded Modem

文件：62.18 Kbytes 页数：3 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

High Efficient Rectifier Diode

文件：104.02 Kbytes 页数：2 Pages

YANGJIE

扬杰电子