PHOTON COUPLED BILATERAL ANALOG FET

DESCRIPTION\nThe H11F_ series are optically coupled isolators consisting of infrared light emitting diode and a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level • Options :-\n   10mm lead spread - add G after part no.\n   Surface mount - add SM after part no.\n   Tape&reel - add SMT&R after part no.\nAs a remote variable resistor\n• ≤100Ω to ≥300MΩ\n• ≥ 99.9% Linearity\n• ≤15 pF Shunt Capacitance\n• ≥100GΩ I/O Isolation ResistanceAs an Analog Signal Swi;

ISOCOM

英国安数光

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件：245.3 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件：2.07738 Mbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件：2.07738 Mbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司