High Voltage Photodarlington Optocouplers

General Description The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an inte gral base-emitter resistor to optimize elevated tempera t

文件：139 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

High Voltage Photodarlington Optocouplers

General Description The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an inte gral base-emitter resistor to optimize elevated tempera t

文件：248.08 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

High Voltage Photodarlington Optocouplers

General Description The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an inte gral base-emitter resistor to optimize elevated tempera t

文件：248.08 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

6-Pin DIP High Voltage Photodarlington Optocouplers

文件：397.93 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

6 引脚 DIP 高电压光电达林顿输出光耦合器

H11G1M 和 H11G2M 是光达灵顿型光耦合光电耦合器。 此类器件包含与连接至光电晶体管的硅达林顿晶体管耦合的砷化镓红外线发光二极管，该二极管具有集成的基极-发射极电阻以优化高温特性。 • 高 BVCEO:\n• H11G1M 最低值 100 V\n• H11G2M 最低值 80 V\n• 对于低输入电流的高敏感度（IF = 1 mA 时，最小 500% CTR）\n• 高温时低漏电流（80°C 时，最大 100µA）\n• 安全和法规认证：\n• UL1577，4170 VACRMS（1 分钟）\n• DIN-EN/IEC60747-5-5，850 V 峰值工作绝缘电压;

ONSEMI

安森美半导体