丝印：H11；Package：LFCSP；Ultralow Distortion Differential ADC Driver

FEATURES Extremely low harmonic distortion (HD) −106 dBc HD2 @ 10 MHz −82 dBc HD2 @ 50 MHz −109 dBc HD3 @ 10 MHz −82 dBc HD3 @ 50 MHz Low input voltage noise: 2.6 nV/√Hz High speed −3 dB bandwidth of 1000 MHz, G = +1 Slew rate: 4700 V/μs 0.1 dB gain flatness to 150 MHz Fast overdrive recovery o

文件：597.74 Kbytes 页数：26 Pages

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亚德诺

丝印：H11；Package：LFCSP；Ultralow Distortion Differential ADC Driver

FEATURES Extremely low harmonic distortion (HD) −106 dBc HD2 @ 10 MHz −82 dBc HD2 @ 50 MHz −109 dBc HD3 @ 10 MHz −82 dBc HD3 @ 50 MHz Low input voltage noise: 2.6 nV/√Hz High speed −3 dB bandwidth of 1000 MHz, G = +1 Slew rate: 4700 V/μs 0.1 dB gain flatness to 150 MHz Fast overdrive recovery o

文件：597.74 Kbytes 页数：26 Pages

AD

亚德诺

丝印：H11；Package：LFCSP；Ultralow Distortion Differential ADC Driver

FEATURES Extremely low harmonic distortion (HD) −106 dBc HD2 @ 10 MHz −82 dBc HD2 @ 50 MHz −109 dBc HD3 @ 10 MHz −82 dBc HD3 @ 50 MHz Low input voltage noise: 2.6 nV/√Hz High speed −3 dB bandwidth of 1000 MHz, G = +1 Slew rate: 4700 V/μs 0.1 dB gain flatness to 150 MHz Fast overdrive recovery o

文件：597.74 Kbytes 页数：26 Pages

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亚德诺

丝印：H11；Package：UMT6；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Two DTC114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half.

文件：471.94 Kbytes 页数：8 Pages

ROHM

罗姆

丝印：H11；Package：EMT6；General purpose (dual digital transistors)

Features 1) Two DTC114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half.

文件：44.7 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：H11；Package：SOT-26；General purpose (dual digital transistors)

Features 1) Two DTC114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half.

文件：61.98 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：H11；Package：SOT-26；General purpose (dual digital transistors)

Features 1) Two DTC114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half.

文件：44.7 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：H11；Package：SMT6；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Two DTC114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half.

文件：471.94 Kbytes 页数：8 Pages

ROHM

罗姆

丝印：H11；Package：EMT6；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Two DTC114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half.

文件：471.94 Kbytes 页数：8 Pages

ROHM

罗姆

丝印：H11；Package：SOT-363；General purpose (dual digital transistors)

Features 1) Two DTC114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half.

文件：44.7 Kbytes 页数：3 Pages

ROHM

罗姆