N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de

文件：62.65 Kbytes 页数：5 Pages

HSMC

华昕

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de

文件：62.65 Kbytes 页数：5 Pages

HSMC

华昕

N Channel MOSFET

[STANSON TECHNOLOGY] Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature

文件：174.41 Kbytes 页数：5 Pages

STANSON

司坦森

N Channel MOSFET

文件：190.91 Kbytes 页数：5 Pages

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