H01N60SI中文资料PDF规格书
H01N60SI规格书详情
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.
Features
• 1A, 600V, RDS(on)=12Ω@VGS=10V
• Low Gate Charge 15nC(Typ.)
• Low Crss 4pF(Typ.)
• Fast Switching
• Improved dv/dt Capability
产品属性
- 型号:
H01N60SI
- 制造商:
HSMC
- 制造商全称:
HSMC
- 功能描述:
N-Channel Power Field Effect Transistor
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MORNSUN/金升阳 |
23+ |
DIP |
5200 |
金升阳一级代理只做原装假一罚千价格优势 |
询价 | ||
MOT |
20+/21+ |
DIP |
5855 |
全新原装进口价格优势 |
询价 | ||
华昕 |
09+ |
TO-92 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
华昕 |
2017+ |
TO-92 |
6523 |
只做原装正品!现货或订货! |
询价 | ||
VB |
2019 |
TO-252 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
H |
23+ |
TO-252 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
Telegartner |
2308+ |
312929 |
一级代理,原装正品,公司现货! |
询价 | |||
ON/安森美 |
21+ROHS |
QFN5 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ROHM |
16+ |
SOT-323 |
10000 |
进口原装现货/价格优势! |
询价 | ||
KEC |
23+ |
SOT23-3 |
15000 |
全新原装现货,价格优势 |
询价 |