RLTPGB40N120CT

TrenchandField-stoptechnology

Features TrenchandField-stoptechnology Lowcollectortoemittersaturationvoltage OptimizedforFastSwitching Easyparallelswitchingcapability Shortcircuitwithstandstime-10μs Applications UninterruptiblePowerSupply InductionHeating Electricweldingmachine

SCM40N120PCT

1200V/40mΩN-channelSiCPowerMOSFET

Features Lowon-resistanceRDS(on) Bestthermalconductivityandbehavior Highspeedswitching Highrobustnessofdv/dt Lowcapacitancesandlowgatecharge Lowgateresistanceforhigh-frequencyswitching Easytoparallel HalogenFree,RoHSCompliant Applications Switchingmodepower

SCM40N120PS

1200V/40mΩN-channelSiCPowerMOSFET

Features Lowon-resistanceRDS(on) Bestthermalconductivityandbehavior Highspeedswitching Highrobustnessofdv/dt Lowcapacitancesandlowgatecharge Lowgateresistanceforhigh-frequencyswitching Easytoparallel HalogenFree,RoHSCompliant Applications Switchingmodepower

STGW40N120KD

40A,1200VshortcircuitruggedIGBTwithUltrafastdiode

TRS40N120HB

SiCSchottkyBarrierDiode

Applications •PowerFactorCorrection •SolarInverters •UninterruptiblePowerSupplies •DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF(PerLeg)=1.27V(typ.) (3)Lowtotalcapacitivecharge:Qc(PerLeg)=108nC(typ.) (4)Lowreversecurr

TSG40N120

N-ChannelIGBTwithFRD.

TSG40N120CE

N-ChannelIGBTwithFRD