1200V /40 mΩ N-channel SiC Power MOSFET

Features Low on-resistance RDS(on) Best thermal conductivity and behavior High speed switching High robustness of dv/dt Low capacitances and low gate charge Low gate resistance for high-frequency switching Easy to parallel Halogen Free, RoHS Compliant Applications Switching mode power

文件：440.74 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

1200V /40 mΩ N-channel SiC Power MOSFET

Features Low on-resistance RDS(on) Best thermal conductivity and behavior High speed switching High robustness of dv/dt Low capacitances and low gate charge Low gate resistance for high-frequency switching Easy to parallel Halogen Free, RoHS Compliant Applications Switching mode power

文件：451.95 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

40 A, 1200 V short circuit rugged IGBT with Ultrafast diode

文件：763.2 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF (Per Leg) = 1.27 V (typ.) (3) Low total capacitive charge: Qc (Per Leg) = 108 nC (typ.) (4) Low reverse curr

文件：443.18 Kbytes 页数：7 Pages

TOSHIBA

东芝