Trench and Field-stop technology

Features Trench and Field-stop technology Low collector to emitter saturation voltage Optimized for Fast Switching Easy parallel switching capability Short circuit withstands time - 10μs Applications Uninterruptible Power Supply Induction Heating Electric welding machine

文件：1.46637 Mbytes 页数：4 Pages

GWSEMI

唯圣电子

1200V /40 mΩ N-channel SiC Power MOSFET

Features Low on-resistance RDS(on) Best thermal conductivity and behavior High speed switching High robustness of dv/dt Low capacitances and low gate charge Low gate resistance for high-frequency switching Easy to parallel Halogen Free, RoHS Compliant Applications Switching mode power

文件：440.74 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

1200V /40 mΩ N-channel SiC Power MOSFET

Features Low on-resistance RDS(on) Best thermal conductivity and behavior High speed switching High robustness of dv/dt Low capacitances and low gate charge Low gate resistance for high-frequency switching Easy to parallel Halogen Free, RoHS Compliant Applications Switching mode power

文件：451.95 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

40 A, 1200 V short circuit rugged IGBT with Ultrafast diode

文件：763.2 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体