GTRB186002FC-V1数据手册MACOM中文资料规格书

描述 Description

The GTRB186002FC is a 500-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

特性 Features

·Typical Pulsed CW performance, 1880 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
·Output power at P3dB = 500 W
·Efficiency at P3dB = 68%
·Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
·Pb-free and RoHS compliant

应用 Application

·Multi-standard Cellular Power Amplifiers