丝印：GT750P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT750P10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：586.01 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT750P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The GT750P10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：834.4 Kbytes 页数：6 Pages

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谷峰半导体

Trench Mosfet

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谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The GT750P10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.02273 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

OptiMOSTM Power-Transistor, -100 V

Features • P-Channel • Very low on-resistance RDS(on) @ VGS=4.5 V • 100 avalanche tested • Logic Level • Enhancement mode • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.24035 Mbytes 页数：11 Pages

INFINEON

英飞凌