GT6K2P10KH资料使用说明书贸易商谷峰半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
GT6K2P10KH	文件：602.38 Kbytes Page：6 Pages	丝印：GT6K2P10；Package：TO-252；P-Channel Enhancement Mode Power MOSFET Description The GT6K2P10KH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：602.38 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
GT6K2P10KH	文件：300 bytes Page：1 Pages	-100V P Channel SGT MOSFET	GOFORD 谷峰半导体	GOFORD
GT6K2P10IH	文件：861.18 Kbytes Page：6 Pages	P-Channel Enhancement Mode Power MOSFET Description The GT6K2P10IH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：861.18 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
GT6K2P10IHA	文件：1.08743 Mbytes Page：6 Pages	P-Channel Enhancement Mode Power MOSFET Description The GT6K2P10IHA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：1.08743 Mbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD

更多GT6K2P10KH供应商更新时间2026-2-5 11:06:00