| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
6 Amp Glass Passivated Quick Connect Rectifier Features •Packagesuitableforassembly •Glasspassivatedjunction •Highcurrentcapability •Plasticpackagehasunderwriterslaboratoryflammabilityclassification94V-O •RoHScompliant | TAITRON TAITRON | TAITRON | ||
The 4th Generation Soft Switching Applications DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC( | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
The 4th Generation Soft Switching Applications DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC( | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Gate Bipolar Transistor Silicon N Channel IGBT DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC( | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Current Resonance Inverter Switching Application DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC( | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Current Resonance Inverter Switching Application DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC( | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC( | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC( | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC( | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGHPOWERSWITCHINGAPPLICATIONS ●FourthgenerationIGBT ●FRDincludedbetweenemitterandcollector ●Enhancementmodetype ●Highspeed IGBT:tf=0.25μs(TYP.) FRD:trr=0.7μs(TYP.) ●Lowsaturationvoltage:VCE(sat)=2.1V(TYP.) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC( | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT VoltageResonanceInverterSwitchingApplication •Enhancementmodetype •Highspeed:tf=0.09μs(typ.)(IC=60A) •Lowsaturationvoltage:VCE(sat)=2.3V(typ.)(IC=60A) •FRDincludedbetweenemitterandcollector •TO-3P(LH)(Toshibapackagename) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Consumer Application Voltage Resonance Inverter Switching Application DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC( | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Insulated Gate Bipolar Transistor Silicon N Channel IGBT HighPowerSwitchingApplications The4thGeneration •FRDincludedbetweenemitterandcollector •Enhancement-mode •HighspeedIGBT:tf=0.25µs(typ.)(IC=60A) FRD:trr=0.8µs(typ.)(di/dt=−20A/µs) •Lowsaturationvoltage:VCE(sat)=2.3V(typ.)(IC= | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA |
详细参数
- 型号：
GT60
- 制造商：
TAITRON
- 制造商全称：
TAITRON Components Incorporated
- 功能描述：
6 Amp Glass Passivated Quick Connect Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三凌 |
1635+ |
TO-3P |
6000 |
好渠道!好价格!一片起卖! |
询价 | ||
三凌 |
2023+ |
TO-3P |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
三凌 |
21+ |
TO-3P |
35210 |
一级代理/放心采购 |
询价 | ||
三凌 |
23+ |
5000 |
专注配单,只做原装进口现货 |
询价 | |||
三凌 |
23+ |
5000 |
专注配单,只做原装进口现货 |
询价 | |||
MIT |
21+ROHS |
TO-3PL |
45000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
三凌 |
23+ |
2800 |
正品原装货价格低qq:2987726803 |
询价 | |||
TOSHIBA |
23+ |
管3PL |
18000 |
询价 | |||
MITSUBIS三菱 |
23+ |
管3PL |
5000 |
原装正品,假一罚十 |
询价 | ||
TOSHIBA |
1746+ |
TO3PL |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 |
相关规格书
更多- GT60J101
- GT60J321(Q)
- GT60J323
- GT60J323H
- GT60M104
- GT60M303
- GT60M322
- GT60M323(Q)
- GT60M324
- GT60N321
- GT60N322
- GT61
- GT610G
- GT6-1214SCF
- GT62
- GT62-B8236
- GT6-2PK-01
- GT6-2PK-10
- GT6-2PK-16
- GT6-2PK-23
- GT6-2PK-31
- GT63L10A
- GT63L25A
- GT63L40A
- GT63L6A
- GT63L9A
- GT64010A-B
- GT64010A-P
- GT64115-A2-PBB-C000
- GT-64120A-B2
- GT64120AB2-BBB1C083
- GT64120AB2-BBB-I083
- GT-64120-B-4
- GT64121AB2-BBB-C000
- GT64130-A1-BBB1C000
- GT64131-A1-BBB1I066
- GT64240BC0-BBD1C100
- GT64240BC0-BBD1I100
- GT64240BC0-BBD-I100
- GT64241BC0-BBD1C133
- GT64241BC0-BBD-C100
- GT64241BC0-BBD-I100
- GT64242BC0-BBD1C133
- GT64242BC0-BBD-C133
- GT64260BC0-BBD1C133
相关库存
更多- GT60J321
- GT60J322
- GT60J323(Q)
- GT60J323H(Q)
- GT60M301
- GT60M303(Q)
- GT60M323
- GT60M323_06
- GT60M324(Q)
- GT60N321(Q)
- GT60N322(Q)
- GT610
- GT6-1214PCF
- GT61G
- GT620NS
- GT62G
- GT6-2PK-03
- GT6-2PK-12
- GT6-2PK-17
- GT6-2PK-28
- GT6301K
- GT63L18A
- GT63L36A
- GT63L50A
- GT63L8A
- GT63S10A
- GT64010AB1
- GT64011-A1-PBB-C000
- GT-64120A-B-0
- GT64120AB2-BBB1C000
- GT64120AB2-BBB-C000
- GT64120AB3-BBBNC000
- GT64120BB3
- GT64121AB2-BBB-I066
- GT64130-A1-BBB1I066
- GT64131-A1-BBB-C000
- GT64240BC0-BBD1C133
- GT64240BC0-BBD-C133
- GT64241BC0-BBD1C100
- GT64241BC0-BBD1I100
- GT64241BC0-BBD-C133
- GT64242BC0-BBD1C100
- GT64242BC0-BBD1I100
- GT-64260BB0
- GT64260BC0-BBD1I100
