IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.2V@IC=50A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial Power Supplies · Industrial Drives · Solar Inverters

文件：333.5 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：52JR22；Package：TO-3P；Discrete IGBTs Silicon N-Channel IGBT

文件：207.58 Kbytes 页数：7 Pages

TOSHIBA

东芝

IGBT for soft switching applications

Feature：Fast switching / Low saturation voltage\nNumber of Circuits：2\nBuilt-in Diodes：Yes\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Collector Current IC 50 A \nBreakdown Voltage VCES 600 V ;

Toshiba

东芝

Package：TO-3P-3，SC-65-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：PB-F IGBT / TRANSISTOR TO-3PN(OS

Toshiba Semiconductor and Storage