首页 >GT25Q128A-U>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
3V128M-BITSERIALNORFLASHWITHDUALANDQUADSPI&QPI | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
128-Mbit,1.8V,multipleI/O,4-Kbytesubsectoreraseonbootsectors,XiPenabled,serialflashmemorywith108MHzSPIbusinterface Description TheN25Q128isa128Mbit(16Mbx8)serialFlashmemory,withadvancedwriteprotectionmechanisms.ItisaccessedbyahighspeedSPI-compatiblebusandfeaturesthepossibilitytoworkinXIP(“eXecutioninPlace”)mode.TheN25Q128supportsinnovative,high-performancequad/dual | NUMONYX numonyx | NUMONYX | ||
128-Mbit3V,multipleI/O,4-Kbytesubsectoreraseonbootsectors,XiPenabled,serialflashmemorywith108MHzSPIbusinterface | NUMONYX numonyx | NUMONYX | ||
UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,128M-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q128HisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyofhighvolume consumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryintoembeddedor externalRAMforexecution.Theflexibleerasearchitectureofthedevice,wi | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA |
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