N CHANNEL (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件：325.27 Kbytes 页数：6 Pages

TOSHIBA

东芝

N CHANNEL (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

文件：322.58 Kbytes 页数：6 Pages

TOSHIBA

东芝

High Power Switching Applications Fast Switching Applications

High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 μs (typ.) Low switching loss : Eon = 0.40 mJ (typ.)

文件：329.82 Kbytes 页数：7 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Discrete IGBTs Silicon N-Channel IGBT

Features (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 20 A) (3) FRD included between emitter and collector Applications • Motor Drivers

文件：251.62 Kbytes 页数：10 Pages

TOSHIBA

东芝

SPECIFICATIONS FOR LCD MODULE

文件：384.45 Kbytes 页数：25 Pages

JHE

SPECIFICATIONS FOR LCD MODULE

文件：384.45 Kbytes 页数：25 Pages

JHE

SPECIFICATIONS FOR LCD MODULE

文件：384.45 Kbytes 页数：25 Pages

JHE

SPECIFICATIONS FOR LCD MODULE

文件：384.45 Kbytes 页数：25 Pages

JHE

SPECIFICATIONS FOR LCD MODULE

文件：384.45 Kbytes 页数：25 Pages

JHE