| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GT13 | PNEUMATIC TURBINE VIBRATIORS [VIBTEC] 文件:168.62 Kbytes 页数:2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | |
GT13 | Highly efficient and reliable one step crimp termination allows high volume production with semiautomatic equipment. 文件:1.03491 Mbytes 页数:19 Pages | HIROSEHirose Electric Company 广濑日本广濑电机株式会社 | HIROSE | |
丝印:GT130N10;Package:DFN3X3-8L;N-Channel Enhancement Mode Power MOSFET Description The GT130N10D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件:719.88 Kbytes 页数:6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印:GT130N10;Package:DFN3X3-8L;N-Channel Enhancement Mode Power MOSFET Description The GT130N10D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件:1.0272 Mbytes 页数:6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印:GT130N10;Package:TO-220F;N-Channel Enhancement Mode Power MOSFET Description The GT130N10F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件:687.12 Kbytes 页数:6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印:GT130N10;Package:TO-252;N-Channel Enhancement Mode Power MOSFET Description The GT130N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件:686.84 Kbytes 页数:6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印:GT130N10;Package:TO-263;N-Channel Enhancement Mode Power MOSFET Description The GT130N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件:969.76 Kbytes 页数:6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印:GT130N10;Package:TO-263;N-Channel Enhancement Mode Power MOSFET Description The GT130N10MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件:1.23216 Mbytes 页数:6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
丝印:GT130N20;Package:TO-263;N-Channel Enhancement Mode Power MOSFET Description The GT130N20M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件:1.08658 Mbytes 页数:6 Pages | GOFORD 谷峰半导体 | GOFORD | ||
Coaxial cable connection of Antennas, Sensors, and Communication Trunk Lines Termination of coaxial cables in automotive, medical and instrumentation applications utilizes one step to crimp the center conductor, shield and outer insulation. Features ● Cost efficient termination Highly efficient and reliable one step crimp termination allows high volume production wi 文件:409.04 Kbytes 页数:10 Pages | HIROSEHirose Electric Company 广濑日本广濑电机株式会社 | HIROSE |
技术参数
- ID (A):
130
- RDS(typ) (mΩ):
1.3
- RDS(max) (mΩ):
1.6
- Vgs (V):
44199
- 封装类型:
PPAK5*6/DFN5*6
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
C&K |
24+/25+ |
580 |
原装正品现货库存价优 |
询价 | |||
ETC |
24+ |
SOT323 |
5000 |
询价 | |||
C&K |
24+ |
SMD |
5000 |
全现原装公司现货 |
询价 | ||
SSC |
23+ |
NA |
150 |
专做原装正品,假一罚百! |
询价 | ||
C |
25+ |
SMD |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
Vek-onlin |
19+ |
SOT-23 |
200000 |
询价 | |||
Vek-onlin |
20+ |
SOT-23 |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
HIROSE |
2022+ |
250 |
全新原装 货期两周 |
询价 | |||
HRS |
25+ |
1600 |
普通 |
询价 | |||
Hirose |
2020+ |
N/A |
8 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 |
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