丝印：GT085N10H；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT085N10TH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：979.88 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

100V N Channel SGT MOSFET

GOFORD

谷峰半导体

N-Channel PowerTrench짰 MOSFET 100V, 96A, 8.5m廓

文件：325.48 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-Channel PowerTrench짰 MOSFET 100 V, 96 A, 8.5 m廓

文件：4.08856 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID =96A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.58 Kbytes 页数：2 Pages

ISC

无锡固电