丝印：GT035N06；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT035N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

文件：626.53 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

60V N Channel SGT MOSFET

GOFORD

谷峰半导体

N-ch Trench MOS FET

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATU

文件：411.88 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N-ch Trench MOS FET

文件：103.88 Kbytes 页数：9 Pages

KEC

KEC(Korea Electronics)

Nch 60V 3.5A Small Signal MOSFET

文件：2.70218 Mbytes 页数：14 Pages

ROHM

罗姆