GT035N06T

Marking：GT035N06；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description TheGT035N06Tusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters lSynchronousRectification

FDPF035N06B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=88A@TC=25℃ ·DrainSourceVoltage- :VDSS=660V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

FDPF035N06B

N-ChannelPowerTrenchMOSFET

KU035N06P

N-chTrenchMOSFET

GeneralDescription ThisTrenchMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConverter,SynchronousRectificationandaloadswitchinbatterypoweredapplications FEATU

KUS035N06F

N-chTrenchMOSFET

RSQ035N06FRA

Nch60V3.5ASmallSignalMOSFET

RSQ035N06HZG

Nch60V3.5ASmallSignalMOSFET