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GS832018T-200I

2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

Features •FTpinforuser-configurableflowthroughorpipelineoperation •SingleCycleDeselect(SCD)operation •2.5Vor3.3V+10/–10corepowersupply •2.5Vor3.3VI/Osupply •LBOpinforLinearorInterleavedBurstmode •Internalinputresistorsonmodepinsallowf

GSI

GSI Technology

GS832018T-225

2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

Features •FTpinforuser-configurableflowthroughorpipelineoperation •SingleCycleDeselect(SCD)operation •2.5Vor3.3V+10/–10corepowersupply •2.5Vor3.3VI/Osupply •LBOpinforLinearorInterleavedBurstmode •Internalinputresistorsonmodepinsallowf

GSI

GSI Technology

GS832018T-225I

2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

Features •FTpinforuser-configurableflowthroughorpipelineoperation •SingleCycleDeselect(SCD)operation •2.5Vor3.3V+10/–10corepowersupply •2.5Vor3.3VI/Osupply •LBOpinforLinearorInterleavedBurstmode •Internalinputresistorsonmodepinsallowf

GSI

GSI Technology

GS832018T-250

2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

Features •FTpinforuser-configurableflowthroughorpipelineoperation •SingleCycleDeselect(SCD)operation •2.5Vor3.3V+10/–10corepowersupply •2.5Vor3.3VI/Osupply •LBOpinforLinearorInterleavedBurstmode •Internalinputresistorsonmodepinsallowf

GSI

GSI Technology

GS832018T-250I

2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

Features •FTpinforuser-configurableflowthroughorpipelineoperation •SingleCycleDeselect(SCD)operation •2.5Vor3.3V+10/–10corepowersupply •2.5Vor3.3VI/Osupply •LBOpinforLinearorInterleavedBurstmode •Internalinputresistorsonmodepinsallowf

GSI

GSI Technology

GS832018AGT-150

2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

GSI

GSI Technology

GS832018AGT-150I

2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

GSI

GSI Technology

GS832018AGT-200

2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

GSI

GSI Technology

GS832018AGT-200

SYNCBURST SRAMs; • Industry-standard Synchronous Burst Interface\n• ZQ mode pin for user-selectable high/low output drive\n• LBO pin for Linear or Interleaved Burst mode\n• Byte Write (BW) and/or Global Write (GW) operation\n• Internal self-timed write cycle\n• Automatic power-down for portable applications\n• JEDEC-standard pinout and package\n• RoHS-compliant package available\n;

GSI

GSI Technology

GS832018AGT-200I

2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

GSI

GSI Technology

技术参数

  • Density:

    36Mb

  • Configuration:

    x18

  • Cycle Time (MHz):

    150

  • Access Time (ns):

    7.5

  • Voltage (V):

    2.5

  • Package:

    100 TQFP

  • 6/6 RoHS:

    yes

  • Temp:

    Comm

  • Special Features:

    SCD

  • Status:

    Production

  • MSL:

    3

  • ECCN:

    3A991

  • ECCN Suball:

    B2B

  • HTS Code:

    8542.32.00.40

供应商型号品牌批号封装库存备注价格
GSI
13+
NA
100
终端备货原装现货-军工器件供应商
询价
GSITECHNOLOGY
2022+
72
只做原装,价格优惠,长期供货。
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GSI
23+
QFN
130000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
GSI Technology
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
24+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
询价
GSI Technology Inc
23+/24+
100-LQFP
8600
只供原装进口公司现货+可订货
询价
GSI Technology Inc.
25+
100-LQFP
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
GLOBESP
23+
QFP
10
全新原装正品现货,支持订货
询价
GSI
23+
QFP
8650
受权代理!全新原装现货特价热卖!
询价
更多GS832018供应商 更新时间2025-7-29 16:32:00