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GS8161Z18BT-200V

18Mb Pipelined and Flow Through Synchronous NBT SRAM

文件:1.40351 Mbytes 页数:35 Pages

GSI

GS8161Z18BT-250

18Mb Pipelined and Flow Through Synchronous NBT SRAM

文件:863.75 Kbytes 页数:37 Pages

GSI

GS8161Z18BT-250I

18Mb Pipelined and Flow Through Synchronous NBT SRAM

文件:863.75 Kbytes 页数:37 Pages

GSI

GS8161Z18BT-250IV

18Mb Pipelined and Flow Through Synchronous NBT SRAM

文件:1.40351 Mbytes 页数:35 Pages

GSI

GS8161Z18BT-250V

18Mb Pipelined and Flow Through Synchronous NBT SRAM

文件:1.40351 Mbytes 页数:35 Pages

GSI

GS8161Z18BT-V

18Mb Pipelined and Flow Through Synchronous NBT SRAM

文件:1.40351 Mbytes 页数:35 Pages

GSI

GS8161Z18BD-150I

NBT SRAMs

• NBT functionality allows zero wait read-write-read bus utilization\n• Fully pin-compatible NtRAM™, NoBL™, and ZBT™ SRAMs\n• LBO pin for Linear or Interleaved Burst mode\n• Byte Write (BW) and/or Global Write (GW) operation\n• Internal self-timed write cycle\n• Automatic power-down for portable app;

GSI

GS8161Z18BD-150IV

NBT SRAMs

• NBT functionality allows zero wait read-write-read bus utilization\n• Fully pin-compatible NtRAM™, NoBL™, and ZBT™ SRAMs\n• LBO pin for Linear or Interleaved Burst mode\n• Byte Write (BW) and/or Global Write (GW) operation\n• Internal self-timed write cycle\n• Automatic power-down for portable app;

GSI

GS8161Z18BD-150V

NBT SRAMs

• NBT functionality allows zero wait read-write-read bus utilization\n• LBO pin for Linear or Interleaved Burst mode\n• Internal self-timed write cycle\n• JEDEC-standard pinout and package\n• RoHS-compliant package available\n;

GSI

技术参数

  • Density:

    18Mb

  • Configuration:

    x18

  • Cycle Time (MHz):

    150

  • Access Time (ns):

    7.5

  • Voltage (V):

    2.5

  • Package:

    165 BGA

  • 6/6 RoHS:

    no

  • Temp:

    Comm

  • Special Features:

    JTAG

  • Status:

    Production-NRND

  • MSL:

    3

  • ECCN:

    3A991

  • ECCN Suball:

    B2B

  • HTS Code:

    8542.32.00.40

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更多GS8161Z18B供应商 更新时间2026-2-5 15:14:00