18Mb SyncBurst SRAMs

Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Inte

文件：1.22882 Mbytes 页数：37 Pages

GSI

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now fin

文件：946.25 Kbytes 页数：36 Pages

GSI

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now fin

文件：946.25 Kbytes 页数：36 Pages

GSI

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now fin

文件：946.25 Kbytes 页数：36 Pages

GSI

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now fin

文件：946.25 Kbytes 页数：36 Pages

GSI

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now fin

文件：946.25 Kbytes 页数：36 Pages

GSI

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now fin

文件：946.25 Kbytes 页数：36 Pages

GSI

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now fin

文件：946.25 Kbytes 页数：36 Pages

GSI

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now fin

文件：946.25 Kbytes 页数：36 Pages

GSI

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now fin

文件：946.25 Kbytes 页数：36 Pages

GSI