GS8161E18DD技术资料参数行情报价GSIGSI-114ic电子网

首页 >GS8161E18DD>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
GS8161E18DD	文件：1.22883 Mbytes Page：37 Pages	18Mb SyncBurst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Inte 文件：1.22883 Mbytes 页数：37 Pages	GSI	GSI
GS8161E18DD-150	文件：1.22883 Mbytes Page：37 Pages	18Mb SyncBurst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Inte 文件：1.22883 Mbytes 页数：37 Pages	GSI	GSI
GS8161E18DD-150	文件：1.22883 Mbytes Page：37 Pages	18Mb SyncBurst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Inte 文件：1.22883 Mbytes 页数：37 Pages	GSI	GSI
GS8161E18DD-150	文件：1.22882 Mbytes Page：37 Pages	18Mb SyncBurst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Inte 文件：1.22882 Mbytes 页数：37 Pages	GSI	GSI
GS8161E18DD-150	文件：1.22883 Mbytes Page：37 Pages	18Mb SyncBurst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Inte 文件：1.22883 Mbytes 页数：37 Pages	GSI	GSI
GS8161E18DD-150	文件：1.22882 Mbytes Page：37 Pages	18Mb SyncBurst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Inte 文件：1.22882 Mbytes 页数：37 Pages	GSI	GSI
GS8161E18DD-150	文件：1.22883 Mbytes Page：37 Pages	18Mb SyncBurst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Inte 文件：1.22883 Mbytes 页数：37 Pages	GSI	GSI
GS8161E18DD-150	文件：1.22883 Mbytes Page：37 Pages	18Mb SyncBurst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Inte 文件：1.22883 Mbytes 页数：37 Pages	GSI	GSI
GS8161E18DD-150	文件：1.22882 Mbytes Page：37 Pages	18Mb SyncBurst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Inte 文件：1.22882 Mbytes 页数：37 Pages	GSI	GSI
GS8161E18DD-150I	文件：1.22883 Mbytes Page：37 Pages	18Mb SyncBurst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Inte 文件：1.22883 Mbytes 页数：37 Pages	GSI	GSI

技术参数

Density：
18Mb
Configuration：
x18
Cycle Time (MHz)：
150
Access Time (ns)：
7.5
Voltage (V)：
2.5
Package：
165 BGA
6/6 RoHS：
no
Temp：
Ind
Special Features：
DCD
Status：
Production
MSL：
3
ECCN：
3A991
ECCN Suball：
B2B
HTS Code：
8542.32.00.40

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市鹏顺微电子科技有限公司	GS8161E18DD-250V	GSI Technology	2022+	原厂原包装	8600	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市福田区亿兴成电子商行	GS8161E18T-133				943		询价

更多GS8161E18DD供应商更新时间2025-10-8 8:24:00

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