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GS8161E18

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now fin

文件:946.25 Kbytes 页数:36 Pages

GSI

GS8161E18BD-150

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now

文件:1.39199 Mbytes 页数:35 Pages

GSI

GS8161E18BD-150I

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now

文件:1.39199 Mbytes 页数:35 Pages

GSI

GS8161E18BD-150IV

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in sync

文件:1.39331 Mbytes 页数:35 Pages

GSI

GS8161E18BD-150V

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in sync

文件:1.39331 Mbytes 页数:35 Pages

GSI

GS8161E18BD-200

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now

文件:1.39199 Mbytes 页数:35 Pages

GSI

GS8161E18BD-200I

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now

文件:1.39199 Mbytes 页数:35 Pages

GSI

GS8161E18BD-200IV

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in sync

文件:1.39331 Mbytes 页数:35 Pages

GSI

GS8161E18BD-200V

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in sync

文件:1.39331 Mbytes 页数:35 Pages

GSI

GS8161E18BD-250

1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs

Functional Description Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now

文件:1.39199 Mbytes 页数:35 Pages

GSI

技术参数

  • Density:

    18Mb

  • Configuration:

    x18

  • Cycle Time (MHz):

    150

  • Access Time (ns):

    7.5

  • Voltage (V):

    2.5

  • Package:

    165 BGA

  • 6/6 RoHS:

    no

  • Temp:

    Ind

  • Special Features:

    DCD

  • Status:

    Production

  • MSL:

    3

  • ECCN:

    3A991

  • ECCN Suball:

    B2B

  • HTS Code:

    8542.32.00.40

供应商型号品牌批号封装库存备注价格
943
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GSI Technology
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
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更多GS8161E18供应商 更新时间2025-10-8 8:01:00