型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
GS8161E18 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Functional Description Applications The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now fin 文件:946.25 Kbytes 页数:36 Pages | GSI | GSI | |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Functional Description Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now 文件:1.39199 Mbytes 页数:35 Pages | GSI | GSI | ||
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Functional Description Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now 文件:1.39199 Mbytes 页数:35 Pages | GSI | GSI | ||
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Functional Description Applications The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in sync 文件:1.39331 Mbytes 页数:35 Pages | GSI | GSI | ||
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Functional Description Applications The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in sync 文件:1.39331 Mbytes 页数:35 Pages | GSI | GSI | ||
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Functional Description Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now 文件:1.39199 Mbytes 页数:35 Pages | GSI | GSI | ||
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Functional Description Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now 文件:1.39199 Mbytes 页数:35 Pages | GSI | GSI | ||
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Functional Description Applications The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in sync 文件:1.39331 Mbytes 页数:35 Pages | GSI | GSI | ||
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Functional Description Applications The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in sync 文件:1.39331 Mbytes 页数:35 Pages | GSI | GSI | ||
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Functional Description Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now 文件:1.39199 Mbytes 页数:35 Pages | GSI | GSI |
技术参数
- Density:
18Mb
- Configuration:
x18
- Cycle Time (MHz):
150
- Access Time (ns):
7.5
- Voltage (V):
2.5
- Package:
165 BGA
- 6/6 RoHS:
no
- Temp:
Ind
- Special Features:
DCD
- Status:
Production
- MSL:
3
- ECCN:
3A991
- ECCN Suball:
B2B
- HTS Code:
8542.32.00.40
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