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IPP-7105IT

OUTLINE,IT90,IMPEDANCETRANSFORMING

IPP

Innovative Power Products, Inc.

IRF7105

HEXFETPOWERMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF7105

EVALUATIONKIT

INTRODUCINGLX1710/1711AUDIOMAX ThankyouforyourinterestinthelatestgenerationofAudioMAXproducts.TheenclosedLXE1710evaluationboardisafullyfunctionalmonoamplifierdesignedtodemonstratethe“newandimproved”SwitchingClass-DPowerAmplifierICfromLinfinityMicrosemi.The

MicrosemiMicrosemi Corporation

美高森美美高森美公司

IRF7105

DualNPChannelMOSFET

Features N-Ch: VDS(V)=25V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

IRF7105PBF

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF7105PBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF7105PBF

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF7105QPBF

HEXFETPowerMOSFET

DESCRIPTION TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetiti

IRF

International Rectifier

IRF7105QTRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF7105-SMD

HEXFETPowerMOSFET

SYC

SYC Electronica

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