HEXFET Power MOSFET

文件：298.99 Kbytes 页数：10 Pages

SYC

Dual N P Channel MOSFET

Features N-Ch: VDS (V)=25V RDS(ON)

文件：452.89 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：307.9 Kbytes 页数：10 Pages

IRF

N- and P-Channel 30 V (D-S) MOSFET

文件：1.44766 Mbytes 页数：14 Pages

VBSEMI

微碧半导体