33.0 dBm Power-LNA™ Tuning Range: 0.1 – 2.7 GHz

Features Reference: 5V/300mA/1.95GHz • Gain: 14.8 dB • OP1dB: 33.2 dBm • Drain Efficiency: 58 • OIP3: 43.0 dBm • Eval Board NF: 1.3 dB • Flexible Bias Voltage and Current • Process: GaAs pHEMT Applications • High Efficiency Power Amplifier • Multi-stage LNA • Linear Driver

文件：1.0982 Mbytes 页数：15 Pages

GUERRILLA

High Power LNAs

The GRF5115 is a high linearity PA /Linear Driver with low noise figure (NF). It delivers excellent P1dB of almost 2 watts, IP3 and NF and is tunable from 100 MHz up to 2.7 GHz.(1)The device can be biased with Vdd over a range from 2.7 to 5.0 volts and Iddq can be adjusted for optimal linearity and Reference: 5V/300mA/1.85GHz\n• Gain: 14.4 dB\n• OP1dB: 32.8 dBm\n• OIP3: 47.6 dBm\n• Eval Board NF: 1.3 dB\n• Flexible Bias Voltage and Current\n• Process: GaAs pHEMT;

Guerrilla RF

Low voltage operation

文件：757.04 Kbytes 页数：4 Pages

HOTCHIPHotchip Technology Co.,Ltd

华芯邦深圳市华芯邦科技有限公司

P-Channel Silicon Junction Field-Effect Transistor

P-Channel Silicon Junction Field-Effect Transistor • Analog Switches

文件：72.38 Kbytes 页数：1 Pages

InterFET

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

文件：4.13074 Mbytes 页数：122 Pages

Intersil