LOW NOISE GAIN BLOCK 0.4 to 4.2 GHz

FEATURES Flexible Bias Voltage and Current Process: GaAs pHEMT Compact 1.5 x 1.5 mm DFN-6 Package Reference: 5 V / 2332.5 MHz / 50 mA Gain: 17.8 dB OIP3: 33 dBm OP1dB: 22.5 dBm Evaluation Board Noise Figure: 0.9 dB APPLICATIONS SDARS Stage 2 LNA Cellular Repeaters Automotive Cellular

文件：1.82359 Mbytes 页数：17 Pages

GUERRILLA

High Linearity Gain Blocks

Reference: 5V/50mA/2332.5MHz\n• EVB NF: 0.9 dB\n• Gain: 17.8 dB\n• OP1dB: 21.0 dBm\n• OIP3: 32.0 dBm\n• Flexible Bias Voltage and Current\n• Process: GaAs pHEMT;

Guerrilla RF

LOW NOISE GAIN BLOCK 0.4 to 4.2 GHz

FEATURES Flexible Bias Voltage and Current Process: GaAs pHEMT Compact 1.5 x 1.5 mm DFN-6 Package Tested to AEC-Q100 Grade 2 100 Device Reflow at Assembly 100 Optical Die Inspection Reference: 5 V / 2332.5 MHz / 50 mA Gain: 17.8 dB OIP3: 33 dBm OP1dB: 22.5 dBm Evaluation Board Noise Fig

文件：1.55285 Mbytes 页数：17 Pages

GUERRILLA

High Linearity Gain Blocks

Reference: 5V/50 mA/2335.5MHz\n• Gain: 17.8 dB\n• EVB NF: 0.9 dB\n• OP1dB: 21 dBm\n• OIP3: 32 dBm @ +2 dBm POUT/tone \n• Excellent Broadband Performance\n• Incorporates Optimized Tuning for the SDARS Band\n• AEC-Q100 Qualified for Automotive Applications\n• Flexible Biasing Provides Latitude for Lin;

Guerrilla RF