首页 >GPMP2011>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BroadbandLinearGainBlock0.05to3.8GHz | GUERRILLA Guerrilla RF, Inc. | GUERRILLA | ||
ASSEMBLYDRAWINGHIGHIMPACTROCKERSWITCH1.124x.550PANEL | CWIND CW Industries | CWIND | ||
4&6TumblerPowerSwitchlocks Features/Benefits •Positivedetent •Multi-poleandmulti-position •Snap-togetherassembly •Powerswitching | CK-COMPONENTS C&K Components | CK-COMPONENTS | ||
SiliconNChannelMOSFETSeriesPowerSwitching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconNChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETSeriesPowerSwitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconNChannelMOSFETSeriesPowerSwitching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconNChannelMOSFETSeriesPowerSwitching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconNChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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