N-channel PowerMESH™ 600 V, 14 A very fast IGBT

Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features  Low on-vo

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丝印：GP7NC60H；Package：TO-220；N-channel PowerMESH™ 600 V, 14 A very fast IGBT

Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features  Low on-vo

文件：794.93 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o

文件：1.36326 Mbytes 页数：22 Pages

STMICROELECTRONICS

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丝印：GP7NC60HD；Package：TO-220；N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features ■ Low o

文件：1.36326 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：GP7NC60HD；Package：TO-220；N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT

General Features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ OFF LOSSES INCLUDE TAIL CURRENT ■ LOSSES INCLUDE DIODE RECOVERY ENERGY ■ LOWER CRES/CIES RATIO ■ HIGH FREQUENCY OPERATION UP TO 70 KHz ■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE ■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER

文件：430.39 Kbytes 页数：15 Pages

STMICROELECTRONICS

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