4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES

FEATURES • PROPRIETARY SOFT GLASS® JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE • VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical

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DEC

Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP401DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT)

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Dynex

Low VCE(SAT) Dual Switch IGBT Module Preliminary Information

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP401DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT)

文件：160.29 Kbytes 页数：11 Pages

Dynex

Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information

The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate d

文件：109.5 Kbytes 页数：11 Pages

Dynex

Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.\nThe GP401DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to ■ Low VCE(SAT)\n■ 400A Per Switch\n■ High Thermal Cycling Capability\n■ Non Punch Through Silicon\n■ Isolated MMC Base with AlN Substrates;

Dynex

丹尼克斯

二极管

JieJie

捷捷微电

普通整流二极管

JieJie

捷捷微电