600V/30A Trench Field Stop IGBT

Features ◼ 600V,30A ◼ VCE(sat)(typ.)=1.9V@VGE=15V,IC=30A ◼ High speed switching ◼ Higher system efficiency ◼ Soft current turn-off waveforms

文件：1.19736 Mbytes 页数：8 Pages

LUGUANG

鲁光电子

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications re

文件：214.5 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

文件：254.58 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Short Circuit Rated IGBT

文件：565.84 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体