COMPACT RESIN STEM TYPE INFRARED EMITTING DIODE

Features 1. Ø3mm compact, resin stem type 2. Wide beam angle GL371 Δθ : TYP. ±90° GL372 Δθ : TYP. ±90° 3. High output (Øe : MIN. 1.7mW at IF = 40mA) Applications 1. Floppy disk drives 2. Smoke detectors, optoelectronic switches 3. Infrared applied sys

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SHARPSharp Corporation

夏普

MOS

Guanglei

光磊电子

Silicon N-Channel Power MOSFET

Guanglei

光磊电子

Symbol MULTILED 5 mm T1 3/4, Partly Diffused

Features ● partly diffused, colorless package ● 2.54 mm lead spacing ● high signal efficiency by color change of the LED from green to yellow and orange to superred ● ideal for multiplexed or pulsed operations ● both colors can be controlled separately ● solder leads with stand-off ● availa

文件：331.41 Kbytes 页数：7 Pages

SIEMENS

西门子

4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS

Plastic Medium-Power PNP Silicon Transistors . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • MJE371 is Compl

文件：122.26 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

NPN Darlington With built-in avalanche diode

NPN Darlington With built-in avalanche diode

文件：23.36 Kbytes 页数：1 Pages

SANKEN

三垦