50A,60V Heatsink Planar N-Channel Power MOSFET

General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M

文件：1.45994 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

N-Channel Enhancement-Mode MOSFET

Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency

文件：115.82 Kbytes 页数：5 Pages

GE

OSCONIQ® P 3737 (2W)

Features - Package: SMD epoxy package with silicone lens - Typ. Radiation: 120° - ESD: 8 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B) - Radiant Flux (@ 700mA): typ. 880 mW @ 25°C; typ. 818 mW @ 85°C - Radiant Efficiency (@ 700mA): typ. 58.5% @ 25°C; typ. 56.7% @ 85°C - Photon Fl

文件：1.81258 Mbytes 页数：22 Pages

OSRAM

艾迈斯欧司朗

OSCONIQ® P 3737 (2W)

Features - Package: SMD epoxy package with silicone lens - Typ. Radiation: 120° - ESD: 8 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B) - Radiant Flux (@ 700mA): typ. 880 mW @ 25°C; typ. 818 mW @ 85°C - Radiant Efficiency (@ 700mA): typ. 58.5% @ 25°C; typ. 56.7% @ 85°C - Photon Fl

文件：1.81258 Mbytes 页数：22 Pages

OSRAM

艾迈斯欧司朗

OSCONIQ® P 3737 (2W)

Features - Package: SMD epoxy package with silicone lens - Typ. Radiation: 120° - ESD: 8 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B) - Radiant Flux (@ 700mA): typ. 880 mW @ 25°C; typ. 818 mW @ 85°C - Radiant Efficiency (@ 700mA): typ. 58.5% @ 25°C; typ. 56.7% @ 85°C - Photon Fl

文件：1.81258 Mbytes 页数：22 Pages

OSRAM

艾迈斯欧司朗

High-power LED with our ams OSRAM’s latest chip technology, delivering industry leading performance, superior robustness and long lifetime.

Features - Package: SMD epoxy package with silicone lens - Typ. Radiation: 120° - ESD: 8 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B) - Radiant Flux (@ 700mA): typ. 941 mW @ 25°C; typ. 885 mW @ 85°C - Radiant Efficiency (@ 700mA): typ. 76.8% @ 25°C; typ. 74.8% @ 85°C - Photon Fl

文件：1.81877 Mbytes 页数：22 Pages

OSRAM

艾迈斯欧司朗

High-power LED with our ams OSRAM’s latest chip technology, delivering industry leading performance, superior robustness and long lifetime.

Features - Package: SMD epoxy package with silicone lens - Typ. Radiation: 120° - ESD: 8 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B) - Radiant Flux (@ 700mA): typ. 941 mW @ 25°C; typ. 885 mW @ 85°C - Radiant Efficiency (@ 700mA): typ. 76.8% @ 25°C; typ. 74.8% @ 85°C - Photon Fl

文件：1.81877 Mbytes 页数：22 Pages

OSRAM

艾迈斯欧司朗

16mm Diameter, Single-Turn, Cermet Industrial Panel Controls

文件：585.39 Kbytes 页数：4 Pages

TOCOS

16mm Diameter, Single-Turn, Cermet Industrial Panel Controls

文件：585.39 Kbytes 页数：4 Pages

TOCOS

16mm Diameter, Single-Turn, Cermet Industrial Panel Controls

文件：585.39 Kbytes 页数：4 Pages

TOCOS