P Channel Power MOSFET

文件：122.46 Kbytes 页数：1 Pages

GSG

劲力半导体

P Channel Power MOSFET

Gunter

劲力半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R

文件：379.2 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

900 MHz transmit modulator and 1.3 GHz fractional-N synthesizer

DESCRIPTION This specification defines the requirements for a transmitter modulator and fractional–N synthesizer IC to be used in cellular telephones which employ the North American Dual Mode Cellular System (IS–136). FEATURES • Low current from 3.75V supply • Low phase noise • Main loop with

文件：151.91 Kbytes 页数：23 Pages

PHI

PHI

Advanced Power MOSFET

文件：230.51 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体