30.0 Ampere,45Volt PhotoVoltaic Common Cathode Schottky Barrier Rectifier Diodes

文件：695.13 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

30.0 Ampere,45Volt PhotoVoltaic Application Schottky Barrier Rectifier Diode

文件：813.55 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

30.0A SCHOTTKY BARRIER DIODE

文件：351.05 Kbytes 页数：2 Pages

ZSELEC

淄博圣诺

30A Schottky Diodes

文件：1.3044 Mbytes 页数：4 Pages

DYELEC

迪一电子

Schottky Diodes

文件：148.37 Kbytes 页数：2 Pages

YANGJIE

扬杰电子

SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER

ZOWIE

智威

丝印：GF30H60DF；Package：TO-220FP；600 V, 30 A high speed trench gate field-stop IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.95033 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

丝印：GF30NC60S；Package：TO-220FP；30 A, 600 V, fast IGBT

Features ■ Optimized performance for medium operating frequencies up to 5 kHz in hard switching ■ Low on-voltage drop (VCE(sat)) ■ High current capability Application Motor drive Description This device utilizes the advanced PowerMESH™ process resulting in an excellent trade-off betw

文件：497.21 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

光伏二极管

YJ

益嘉源

Power Modules

SMC

桑德斯微电子