丝印：GF1；Package：SOT-23-3；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features · Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.2V, 1.3V and 1.5V Versions) · Low Standby Current: 0.1μA Typical · Low Quiescent Current: 25μA Typical · High Ripple Rejection: 70dB Typical （f=1kHz） · Output Current: More Than 200mA (300mA Limit) · Extremely Low Noise:

文件：1.19367 Mbytes 页数：29 Pages

DIODES

美台半导体

丝印：GF1A；Package：SMA；General Purpose Rectifiers (Glass Passivated)

Features • Low Forward Voltage Drop • High Current Capability • Easy Pick and Place • High Surge Current Capability • This Device is Pb−Free and is RoHS Compliant

文件：211.17 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：GF1B；Package：SMA；General Purpose Rectifiers (Glass Passivated)

Features • Low Forward Voltage Drop • High Current Capability • Easy Pick and Place • High Surge Current Capability • This Device is Pb−Free and is RoHS Compliant

文件：211.17 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：GF1D；Package：SMA；General Purpose Rectifiers (Glass Passivated)

Features • Low Forward Voltage Drop • High Current Capability • Easy Pick and Place • High Surge Current Capability • This Device is Pb−Free and is RoHS Compliant

文件：211.17 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：GF1G；Package：SMA；General Purpose Rectifiers (Glass Passivated)

Features • Low Forward Voltage Drop • High Current Capability • Easy Pick and Place • High Surge Current Capability • This Device is Pb−Free and is RoHS Compliant

文件：211.17 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：GF1J；Package：SMA；General Purpose Rectifiers (Glass Passivated)

Features • Low Forward Voltage Drop • High Current Capability • Easy Pick and Place • High Surge Current Capability • This Device is Pb−Free and is RoHS Compliant

文件：211.17 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：GF1K；Package：SMA；General Purpose Rectifiers (Glass Passivated)

Features • Low Forward Voltage Drop • High Current Capability • Easy Pick and Place • High Surge Current Capability • This Device is Pb−Free and is RoHS Compliant

文件：211.17 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：GF1M；Package：SMA；General Purpose Rectifiers (Glass Passivated)

Features • Low Forward Voltage Drop • High Current Capability • Easy Pick and Place • High Surge Current Capability • This Device is Pb−Free and is RoHS Compliant

文件：211.17 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：GF10H60DF；Package：TO-220FP；Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.73583 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

丝印：GF10HF60KD；Package：TO-220FP；10 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

文件：477.41 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体