GD2说明书PDF资料供应代理德州仪器第4页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
GD20PJX65F3S	文件：298.48 Kbytes Page：12 Pages	650V/20A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos 文件：298.48 Kbytes 页数：12 Pages	STARPOWER 斯达半导体	STARPOWER
GD20PJX65L1S	文件：289.49 Kbytes Page：13 Pages	650V/20A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos 文件：289.49 Kbytes 页数：13 Pages	STARPOWER 斯达半导体	STARPOWER
GD20PJX65L2S	文件：656.01 Kbytes Page：13 Pages	650V/20A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos 文件：656.01 Kbytes 页数：13 Pages	STARPOWER 斯达半导体	STARPOWER
GD20PJX65L2SF	文件：653.89 Kbytes Page：13 Pages	650V/20A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos 文件：653.89 Kbytes 页数：13 Pages	STARPOWER 斯达半导体	STARPOWER
GD20PUX65F1S_B22	文件：201.08 Kbytes Page：10 Pages	650V/20A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos 文件：201.08 Kbytes 页数：10 Pages	STARPOWER 斯达半导体	STARPOWER
GD20PWX65F1S_B22	文件：241.22 Kbytes Page：12 Pages	650V/20A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos 文件：241.22 Kbytes 页数：12 Pages	STARPOWER 斯达半导体	STARPOWER
GD225HFX170C6S	文件：210.22 Kbytes Page：9 Pages	1700V/225A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po 文件：210.22 Kbytes 页数：9 Pages	STARPOWER 斯达半导体	STARPOWER
GD225HFY120C6S	文件：205.3 Kbytes Page：9 Pages	1200V/225A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverter and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with pos 文件：205.3 Kbytes 页数：9 Pages	STARPOWER 斯达半导体	STARPOWER
GD225HTY120C7S	文件：248.81 Kbytes Page：9 Pages	1200V/225A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po 文件：248.81 Kbytes 页数：9 Pages	STARPOWER 斯达半导体	STARPOWER
GD225MJS120L6S	文件：625.33 Kbytes Page：15 Pages	1200V/225A 3-level in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss They are designed for the applications such as 3-level-application. Features  Low V CE(sat) T rench IGBT technology  V CE(sat) with positive temperature coefficient  Maximum junction temperature 175 o C  文件：625.33 Kbytes 页数：15 Pages	STARPOWER 斯达半导体	STARPOWER

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晶体管资料

型号：
GD200
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Ge-PNP
性质：
低频或音频放大（LF）_功率放大（L）
封装形式：
直插封装
极限工作电压：
30V
最大电流允许值：
6A
最大工作频率：
<1MHZ或未知
引脚数：
2
可代换的型号：
AD146,AD166,AD167,AL102,3AD53A,
最大耗散功率：
12W
放大倍数：
图片代号：
E-44
vtest：
30
htest：
999900
atest：
6
wtest：
12

技术参数

Forward Current：
20
Package：
TO-220-2

供应商	型号	品牌	批号	封装	库存	备注	价格
上海鑫科润电子科技有限公司	GD21150AC	INTEL	01+	BGA	160	原装现货海量库存欢迎咨询	询价
深圳市利加科技有限公司	GD25Q80BSIG	GD	2022+	LQFP100	8000		询价
中天科工半导体（深圳）有限公司	GD25Q512OIGR	GIGADEV	20+	TSSOP8	19570	原装优势主营型号-可开原型号增税票	询价
深圳市佳鑫美电子科技有限公司	GD25Q80SCP	Gigabevi	25+	SOP85.2	2650	原装优势!绝对公司现货	询价
深圳市赛特兴科技有限公司	GD25LQ40TIGR	GD/兆易创新	23+	SOP8	6000	正规渠道,只有原装!	询价
深圳市锐视安科技有限公司	GD25Q16CSIG	GD	18+	SOP8	20000	原装正品现货,可开发票,假一赔十	询价
深圳市华来深电子有限公司	GD25Q41BTIG	GD	23+	SOP-8	8560	受权代理!全新原装现货特价热卖!	询价
深圳市鹏和科技有限公司	GD25Q64BSIG	GAGADEVIC	24+	SOP-8	5000	全现原装公司现货	询价
深圳市振宏微科技有限公司	GD240B	原厂	23+	标准封装	15352	振宏微原装正品,假一罚百	询价
深圳市凌旭科技有限公司	GD25Q80CSIG	GD	21+	SOP8	5415	只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查	询价

更多GD2供应商更新时间2026-1-25 14:04:00

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