SiC N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 205A@ TC=25℃ · Drain Source Voltage -VDSS= 1200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= 20V · High Speed Switching SiC MOSFETs APPLICATIONS · Battery Charger · Photovoltaic Inverter · Server Power Supplies · Uninterruptible Power

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ISC

无锡固电

QSiC™ 1200V SiC COPACK Power Module

Features\n• High speed switching SiC MOSFETs• Freewheeling SiC SBD withzero reverse recovery• Simple to drive• Kelvin reference for stable operation • High speed switching SiC MOSFETs• Freewheeling SiC SBD withzero reverse recovery• Simple to drive• Kelvin reference for stable operation;

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