首页 >GC6003>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

MP6003-N

MonolithicFlyback/ForwardDC-DCConverterEvaluationBoard

MPSMonolithic Power Systems Inc.

美国芯源美国芯源系统有限公司

MPS-6003D

FUENTE1SALIDAVARIABLE0-30V/5A

Descripción FuentedeAlimentaciónPrincipal:220V±10%,50/60Hz±2Hz;110/220V±10%seleccionable,50/60Hz±2Hz(clienteopcional).

AGELECTRONICA

AG Electronica

MPS-6003D+

FUENTE1SALIDAVARIABLE0-30V/5A

Descripción FuentedeAlimentaciónPrincipal:220V±10%,50/60Hz±2Hz;110/220V±10%seleccionable,50/60Hz±2Hz(clienteopcional).

AGELECTRONICA

AG Electronica

MVP-6003

ExpandableFanlessEmbeddedComputer

AdlinkAdlink Technology Inc.

凌华科技凌华科技股份有限公司

N6003NZ

N-channelMOSFET600V,2A,4.4Ω

Description TheN6003NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) •Lowinputcapacitance Ciss=400pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±2.0

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

NCE6003

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6003usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE6003

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

NCE6003M

LCEN-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

NCE6003M

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6003Musesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=60V,ID=3.0A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

NCE6003X

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6003Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

详细参数

  • 型号:

    GC6003

  • 制造商:

    MICROSEMI

  • 制造商全称:

    Microsemi Corporation

  • 功能描述:

    POWER GENERATION Microwave Noise Diodes

供应商型号品牌批号封装库存备注价格
Microchip
966
只做正品
询价
LGS
23+
DIP28
1087
全新原装现货
询价
GOLDSTAR
22+
DIP-24
8500
进口原装!现货库存
询价
GOLDSTAR
23+
DIP18
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Goldstar
2023+环保现货
DIP18
10
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
MIT
23+
DIP
3880
正品原装货价格低
询价
GOLDSTAR
23+
93
6500
专注配单,只做原装进口现货
询价
GOLDSTAR
23+
6500
93
专注配单,只做原装进口现货
询价
ALLEGRO/雅丽高
23+
QFN
69820
终端可以免费供样,支持BOM配单!
询价
GC
2022+
TSSOP24
3000
原厂代理 终端免费提供样品
询价
更多GC6003供应商 更新时间2025-7-22 14:01:00